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SPICE MODEL: MMDT2222V
Lead-free Green
MMDT2222V
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
* * * * * * * * * * * * * * *
Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907V) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
A
SOT-563
BC
Dim A B C D G
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 3/4
D G
Case: SOT-563, Molded Plastic Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.003 grams (approx.)
E1 B1 C2
Mechanical Data
K
M H
H K
L
L M
C1
B2
E2
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Tj, TSTG Value 75 40 6.0 600 -55 to +150 Unit V V V mA C
Characteristic
Operating and Storage and Temperature Range
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3)
@ TA = 25C unless otherwise specified Symbol Pd RqJA Value 150 833 Unit mW C/W
Thermal Resistance, Junction to Ambient (Note 3)
Notes:
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30563 Rev. 4 - 2
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MMDT2222V
a Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Min 75 40 6.0 3/4 3/4 3/4 3/4 35 50 75 100 40 50 35 3/4 0.6 3/4 3/4 -- 300 3/4 Max 3/4 3/4 3/4 10 10 10 20 3/4 3/4 3/4 300 3/4 3/4 3/4 0.3 1.0 1.2 2.0 8 25 3/4 4.0 Unit V V V nA mA nA nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes:
VCE(SAT) VBE(SAT)
V V
Cobo Cibo fT NF
pF pF MHz dB
td tr ts tf
3/4 3/4 3/4 3/4
10 25 225 60
ns ns ns ns
VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
4. Short duration test pulse used to minimize self-heating effect.
DS30563 Rev. 4 - 2
2 of 4 www.diodes.com
MMDT2222V
200
1000
NEW PRODUCT
Pd, POWER DISSIPATION (mW)
150
hFE, DC CURRENT GAIN
TA = 125C
100 TA = -25C TA = +25C
100
10
50
VCE = 1.0V
0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 1, Derating Curve - Total
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current
35
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA
30
CT, CAPACITANCE (pF)
25 20 15 10 5 0 Cobo Cibo
0
2
4
6
8
10
12
14
16
18
20
VR, REVERSE VOLTS (V) Fig. 3 Typical Capacitance Characteristics
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
1.0
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2
VBE(ON), BASE EMITTER VOLTAGE (V)
0.5
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VCE = 5V TA = -50C TA = 25C
TA = 150C
0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current
DS30563 Rev. 4 - 2
3 of 4 www.diodes.com
MMDT2222V
1000
NEW PRODUCT
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1
Ordering Information (Note 5)
Device MMDT2222V-7
Notes:
Packaging SOT-563
Shipping 3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAT YM
KAT = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September
Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
DS30563 Rev. 4 - 2
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MMDT2222V

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